function [R,k,b] = msc(A)
% 多元散射校正
% 輸入待處理矩陣,通過多元散射校正,求得校正后的矩陣
%% 獲得矩陣行列數
[m,n] = size(A);
%% 求平均光譜
M = mean(A,2);
%% 利用最小二乘法求每一列的斜率k和截距b
for i = 1:n
a = polyfit(M,A(:,i),1);
if i == 1
k = a(1);
b = a(2);
else
k = [k,a(1)];
b = [b,a(2)];
end
end
%% 求得結果
for i = 1:n
Ai = (A(:,i)-b(i))/k(i);
if i == 1
R = Ai;
else
R = [R,Ai];
end
end
transimpedance linearization circuitry. This allows it to drive
video loads with excellent differential gain and phase perfor
mance on only 50 mW of power. The AD8001 is a current
feedback amplifier and features gain flatness of 0.1 dB to 100 MHz
while offering differential gain and phase error of 0.01% and
0.025°. This makes the AD8001 ideal for professional video
electronics such as cameras and video switchers. Additionally,
the AD8001’s low distortion and fast settling make it ideal for
buffer high-speed A-to-D converters.
The AD8001 offers low power of 5.5 mA max (VS = ±5 V) and
can run on a single +12 V power supply, while being capable of
delivering over 70 mA of load current. These features make this
amplifier ideal for portable and battery-powered applications
where size and power are critical.
The outstanding bandwidth of 800 MHz along with 1200 V/μs
of slew rate make the AD8001 useful in many general purpose
high-speed applications where dual power supplies of up to ±6 V
and single supplies from 6 V to 12 V are needed. The AD8001 is
available in the industrial temperature range of –40°C to +85°C.
From the transition of analog to digital communication along with seamless mobility and
high computing power of small handheld devices, the wireless communications industry has
seen tremendous changes leading to the integration of several telecommunication networks,
devices and services over last 30 years. The rate of this progress and growth has increased
particularly in the past decade because people no longer use their devices and networks for
voice only, but demand bundle contents such as data download/streaming, HDTV, HD video ,
3D video conferencing with higher efficiency, seamless connectivity, intelligence, reliability
and better user experience. Although the challenges facing service providers and
telecommunication companies differ by product, region, market size, and their areas of
concentration but time to market, efficient utilization of their assets and revenue expansion,
have impacted significantly how to manage and conduct their business while maintaining
sufficient margin.
During the past two decades, technological development related to telecommuni-
cation technologies has allowed organizations of all types and size to be able to de-
velop effective networking applications in support of information management. Fur-
thermore, telecommunication technologies combined with computer technology have
created the foundation of modern information technology which has affected all as-
pects of societal and organizational functions in our modern world.
This book was born from the perception that there is much more to spectrum use
and sharing than one sees reflected in publications, whether academic, commercial
or political. the former – in good research style – tend towards reductionism and
concentrate on specific, detailed aspects. commercial publications tend to empha-
size the positive aspects and they tend to put promise above practice. Given the ever
increasing pace of technology development and recent successes of new wireless
technologies, some pundits predict large-scale spectrum scarcity, potentially lead-
ing to economic catastrophe. Although economic theory has a hard time explaining
recent events that shook the world economy, the notion of spectrum scarcity is intui-
tively acceptable, even if not correct or immediately relevant.
Electrostatic discharge (ESD) is one of the most prevalent threats to the reliability
of electronic components. It is an event in which a finite amount of charge is trans-
ferred from one object (i.e., human body) to another (i.e., microchip). This process
can result in a very high current passing through the microchip within a very short
period of time, and, hence, more than 35% of chip damages can be attributed to an
ESD-related event. As such, designing on-chip ESD structures to protect integrated
circuits against the ESD stresses is a high priority in the semiconductor industry.
In the seven years since the first edition of this book was completed, Electrostatic
Discharge (ESD) phenomena in integrated circuits (IC) continues to be important
as technologies shrink and the speed and size of the chips increases. The phenom-
ena related to ESD events in semiconductor devices take place outside the realm of
normal device operation. Hence, the physics governing this behavior are not typ-
ically found in general textbooks on semiconductors.
Nowadays sensors are part of everyday life in a wide variety of fields: scientific
applications, medical instrumentation, industrial field, ...and, last but not least,
popular mass production and low-cost goods, like smartphones and other mobile
devices. Markets and business behind the field of sensors are quite impressive.
A common trend for consumer applications is miniaturization which requires, on
one side, a lot of research, development efforts, and resources but, on the other
hand, allows costs and final application size reduction. In this scenario scientific
community and industries are very active to drive innovation.
Electric distribution networks are critical parts of power delivery systems. In recent
years, many new technologies and distributed energy resources have been inte-
grated into these networks. To provide electricity at the possible lowest cost and at
required quality, long-term planning is essential for these networks. In distribution
planning, optimal location and size of necessary upgrades are determined to satisfy
the demand and the technical requirements of the loads and to tackle uncertainties
associated with load and distributed energy resources.
This chapter surveys the high temperature and oxygen partial pressure
behavior of complex oxide heterostructures as determined by in situ synchrotron
X-ray methods. We consider both growth and post-growth behavior, emphasizing
the observation of structural and interfacial defects relevant to the size-dependent
properties seen in these systems.