Lithium–sulfur (Li–S) batteries with high energy density and long cycle life are considered to be one of the most promising next-generation energy-storage systems beyond routine lithium-ion batteries. Various approaches have been proposed to break down technical barriers in Li–S battery systems. The use
of nanostructured metal oxides and sulfides for high sulfur utilization and long life span of Li–S batteries is reviewed here. The relationships between the intrinsic properties of metal oxide/sulfide hosts and electrochemical performances of Li–S batteries are discussed. Nanostructured metal oxides/ sulfides hosts used in solid sulfur cathodes, separators/interlayers, lithium- metal-anode protection, and lithium polysulfides batteries are discussed respectively. Prospects for the future developments of Li–S batteries with nanostructured metal oxides/sulfides are also discussed.
This chapter surveys the high temperature and oxygen partial pressure
behavior of complex oxide heterostructures as determined by in situ synchrotron
X-ray methods. We consider both growth and post-growth behavior, emphasizing
the observation of structural and interfacial defects relevant to the size-dependent
properties seen in these systems.
CT圖像金屬偽影消除技術(shù)的文獻(xiàn)。共3篇。
Reduction of Metal Artifacts in X-Ray Computed Tomography
XrayCT_artifacts
Reduction of CT Artifacts Caused by Metallic Implants
由Willi A. Kalender, PhD
Robert Hebel, Dipl Phys
Johannes Ebersberger, Dr rer nat撰寫(xiě)
Construction Strategy of ESD Protection CircuitAbstract： The principles used to construct ESD protection on circuits and the basic conceptions of ESD protection design are presented.Key words：ESD protection/On circuit, ESD design window, ESD current path1 引言靜電放電（ESD，Electrostatic Discharge）給電子器件環(huán)境會(huì)帶來(lái)破壞性的后果。它是造成集成電路失效的主要原因之一。隨著集成電路工藝不斷發(fā)展，互補(bǔ)金屬氧化物半導(dǎo)體（CMOS，Complementary Metal-Oxide Semiconductor）的特征尺寸不斷縮小，金屬氧化物半導(dǎo)體(MOS, Metal-Oxide Semiconductor)的柵氧厚度越來(lái)越薄，MOS 管能承受的電流和電壓也越來(lái)越小，因此要進(jìn)一步優(yōu)化電路的抗ESD 性能，需要從全芯片ESD 保護(hù)結(jié)構(gòu)的設(shè)計(jì)來(lái)進(jìn)行考慮。
基于PIC單片機(jī)的脈沖電源:設(shè)計(jì)了一種金屬凝固過(guò)程用脈沖電源。該電源采用PIC16F877作為主控芯片，實(shí)現(xiàn)對(duì)窄脈沖電流幅值的檢測(cè)，以及時(shí)電流脈沖幅值根據(jù)模糊PID算法進(jìn)行閑環(huán)控制。使用結(jié)果表明：該電源的輸出脈沖波形良好，電流幅值穩(wěn)定，滿足合金材料凝固過(guò)程的工藝要求且運(yùn)行穩(wěn)定可靠。關(guān)鍵詞：脈沖電源；PIC16F877單片機(jī)；模糊PID；閑環(huán)控制
Abstract：A kind of pulse power supply was designed which uses in the metal solidification process ．．I11is power supply used PIC16F877 to take the master control chip reali on to the narrow pulse electric current peak-to-peak value examination，carried on the closed-loop control to the electric current pulse peak-to-peak value basis fuzzy PID algorithm．The use result indicated ，this power supply output se profile is good，and the electric current peak-to-p~k value is stable，It satisfies the alloy material solidification process the technological requirement and movement stable reliable，Key words：p se po wer supply；PIC16F877single-chip microcontroller；f r PID；closed-loop control
Xilinx Next Generation 28 nm FPGA Technology Overview
Xilinx has chosen 28 nm high-κ metal gate (HKMG) highperformance,low-power process technology and combined it with a new unified ASMBL™ architecture to create a new generation of FPGAs that offer lower power and higher performance. These devices enable unprecedented levels of integration and bandwidth and provide system architects and designers a fully programmable alternative to ASSPs and ASICs.
Xilinx Next Generation 28 nm FPGA Technology Overview
Xilinx has chosen 28 nm high-κ metal gate (HKMG) highperformance,low-power process technology and combined it with a new unified ASMBL™ architecture to create a new generation of FPGAs that offer lower power and higher performance. These devices enable unprecedented levels of integration and bandwidth and provide system architects and designers a fully programmable alternative to ASSPs and ASICs.
