These are P-Channel enhancement mode silicon gate
power fi eld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specifi ed level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for other
high-power switching devices. The high input impedance
allows these types to be operated directly from integrated
circuits.
