We analyze, both analytically and numerically, the effectiveness of cloaking an infinite cylinder from observations by electromagnetic waves in three dimensions. We show that, as truncated approximations of the ideal permittivity and permeability tensors tend towards the singular ideal cloaking fields, so that the anisotropy ratio tends to infinity, the D and B fields blow up near the cloaking surface. Since the metamaterials used to implement cloaking are based on effective medium theory, the resulting large variation in D and B will pose a challenge to the suitability of the field averaged characterization of " and 碌. We also consider cloaking with and without the SHS (softand- hard surface) lining, shown in [6] to be theoretically necessary for cloaking in the cylindrical geometry. We demonstrate numerically that cloaking is significantly improved by the SHS lining, with both the far field of the scattered wave significantly reduced and the blow up of D and B prevented.
標(biāo)簽： effectiveness analytically numerically cloaking
上傳時(shí)間： 2017-03-30
上傳用戶：zxc23456789
垃圾文件清理： 垃圾文件清理: 垃圾文件清理 Clean Windows Programs: :rd_dir if " R:~-2,1 "=="\" set R=" R:~1,-2 " if not exist R goto :DD cd /d R for /f "delims=" a in ( dir/ad/b ) do rd /s /q " a" del /f /s /q * cdrd /s /q R :DD Clean Windows Programs: :rd_dir if " R:~-2,1 "=="\" set R=" R:~1,-2 " if not exist R goto :DD cd /d R for /f "delims=" a in ( dir/ad/b ) do rd /s /q " a" del /f /s /q * cdrd /s /q R :DD
標(biāo)簽： Programs Windows rd_dir Clean
上傳時(shí)間： 2017-04-21
上傳用戶：lanhuaying
Electrostatic discharge (ESD) phenomena have been known to mankind since Thales of Miletus in approximately 600 B.C.E. noticed the attraction of strands of hay to amber. Two thousand six hundred years have passed and the quest to obtain a better under- standing of electrostatics and ESD phenomenon continues. Today, the manufacturing of microelectronics has continued the interest in the field of electrostatic phenomenon spanning factory issues, tooling, materials, and the microelectronic industry
標(biāo)簽： Devices Physics ESD and
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
Plug in Electric Vehicles (PEVs) use energy storages usually in the form of battery banks that are designed to be recharged using utility grid power. One category of PEVs are Electric Vehicles (EVs) without an internal-combustion (IC) engine where the energy stored in the battery bank is the only source of power to drive the vehicle. These are also referred as Battery Electric Vehicles (BEVs). The second category of PEVs, which is more commercialized than the EVs, is the Plug in
標(biāo)簽： Electric Vehicles Grids Smart Plug In in
上傳時(shí)間： 2020-06-07
上傳用戶：shancjb
Plug in Electric Vehicles (PEVs) use energy storages usually in the form of battery banks that are designed to be recharged using utility grid power. One category of PEVs are Electric Vehicles (EVs) without an Internal-Combustion (IC) engine where the energy stored in the battery bank is the only source of power to drive the vehicle. These are also referred as Battery Electric Vehicles (BEVs). The second category of PEVs, which is more commercialized than the EVs, is Plug in Hybrid Electric Vehicles (PHEVs) where the role of the energy storage is to supplement the power produced by the IC engine.
標(biāo)簽： Electric Vehicles Plug In
上傳時(shí)間： 2020-06-07
上傳用戶：shancjb
Plug in Electric Vehicles (PEVs) use energy storages usually in the form of battery banks that are designed to be recharged using utility grid power. One category of PEVs are Electric Vehicles (EVs) without an Internal-Combustion (IC) engine where the energy stored in the battery bank is the only source of power to drive the vehicle. These are also referred to as Battery Electric Vehicles (BEVs). The second category of PEVs, which is more commercialized than the EVs, is the Plug in Hybrid Electric Vehicles (PHEVs) where the role of energy storage is to supplement the power produced by the IC engine.
標(biāo)簽： Electric Vehicles Smart Grids in
上傳時(shí)間： 2020-06-07
上傳用戶：shancjb
特點(diǎn)： 精確度0.1%滿刻度 可作各式數(shù)學(xué)演算式功能如:A+B/A-B/AxB/A/B/A&B(Hi or Lo)/|A|/ 16 BIT類比輸出功能 輸入與輸出絕緣耐壓2仟伏特/1分鐘(input/output/power) 寬范圍交直流兩用電源設(shè)計(jì) 尺寸小,穩(wěn)定性高
標(biāo)簽： 微電腦 數(shù)學(xué)演算 隔離傳送器
上傳時(shí)間： 2014-12-23
上傳用戶：ydd3625
Silicon Motion, Inc. has made best efforts to ensure that the information contained in this document is accurate andreliable. However, the information is subject to change without notice. No responsibility is assumed by SiliconMotion, Inc. for the use of this information, nor for infringements of patents or other rights of third parties.Copyright NoticeCopyright 2002, Silicon Motion, Inc. All rights reserved. No part of this publication may be reproduced, photocopied,or transmitted in any form, without the prior written consent of Silicon Motion, Inc. Silicon Motion, Inc. reserves theright to make changes to the product specification without reservation and without notice to our users
標(biāo)簽： GUIDELINES LAYOUT 320 PCB
上傳時(shí)間： 2014-12-24
上傳用戶：zhaistone
特點(diǎn)(FEATURES) 精確度0.1%滿刻度 (Accuracy 0.1%F.S.) 可作各式數(shù)學(xué)演算式功能如:A+B/A-B/AxB/A/B/A&B(Hi or Lo)/|A| (Math functioA+B/A-B/AxB/A/B/A&B(Hi&Lo)/|A|/etc.....) 16 BIT 類比輸出功能(16 bit DAC isolating analog output function) 輸入/輸出1/輸出2絕緣耐壓2仟伏特/1分鐘(Dielectric strength 2KVac/1min. (input/output1/output2/power)) 寬范圍交直流兩用電源設(shè)計(jì)(Wide input range for auxiliary power) 尺寸小,穩(wěn)定性高(Dimension small and High stability)
標(biāo)簽： 微電腦 數(shù)學(xué)演算 輸出 隔離傳送器
上傳時(shí)間： 2013-11-24
上傳用戶：541657925
/*--------- 8051內(nèi)核特殊功能寄存器 -------------*/ sfr ACC = 0xE0; //累加器 sfr B = 0xF0; //B 寄存器 sfr PSW = 0xD0; //程序狀態(tài)字寄存器 sbit CY = PSW^7; //進(jìn)位標(biāo)志位 sbit AC = PSW^6; //輔助進(jìn)位標(biāo)志位 sbit F0 = PSW^5; //用戶標(biāo)志位0 sbit RS1 = PSW^4; //工作寄存器組選擇控制位 sbit RS0 = PSW^3; //工作寄存器組選擇控制位 sbit OV = PSW^2; //溢出標(biāo)志位 sbit F1 = PSW^1; //用戶標(biāo)志位1 sbit P = PSW^0; //奇偶標(biāo)志位 sfr SP = 0x81; //堆棧指針寄存器 sfr DPL = 0x82; //數(shù)據(jù)指針0低字節(jié) sfr DPH = 0x83; //數(shù)據(jù)指針0高字節(jié) /*------------ 系統(tǒng)管理特殊功能寄存器 -------------*/ sfr PCON = 0x87; //電源控制寄存器 sfr AUXR = 0x8E; //輔助寄存器 sfr AUXR1 = 0xA2; //輔助寄存器1 sfr WAKE_CLKO = 0x8F; //時(shí)鐘輸出和喚醒控制寄存器 sfr CLK_DIV = 0x97; //時(shí)鐘分頻控制寄存器 sfr BUS_SPEED = 0xA1; //總線速度控制寄存器 /*----------- 中斷控制特殊功能寄存器 --------------*/ sfr IE = 0xA8; //中斷允許寄存器 sbit EA = IE^7; //總中斷允許位 sbit ELVD = IE^6; //低電壓檢測(cè)中斷控制位 8051
上傳時(shí)間： 2013-10-30
上傳用戶：yxgi5
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