Comparation of the original signal and the filtered signal
標簽： signal Comparation the filtered
上傳時間： 2014-11-05
上傳用戶：z1191176801
This book is the most accurate and up-to-date source of information the STL currently available. ... It has an approach and appeal of its own: it explains techniques for building data structures and algorithms on top of the STL, and in this way appreciates the STL for what it is - a framework. Angelika Langer, Independent Consultant and C++ Report Columnist "A superbly authored treatment of the STL......an excellent book which belongs in any serious C++ developer s library." Jim Armstrong, President 2112 F/X, Texas. \n The C++ Standard Template Library (STL) represents a breakthrough in C++ programming techniques. With it, software developers can achieve vast improvements in the reliability of their software, and increase their own productivity.
標簽： information up-to-date available currently
上傳時間： 2015-10-31
上傳用戶：CHINA526
PRINCIPLE: The UVE algorithm detects and eliminates from a PLS model (including from 1 to A components) those variables that do not carry any relevant information to model Y. The criterion used to trace the un-informative variables is the reliability of the regression coefficients: c_j=mean(b_j)/std(b_j), obtained by jackknifing. The cutoff level, below which c_j is considered to be too small, indicating that the variable j should be removed, is estimated using a matrix of random variables.The predictive power of PLS models built on the retained variables only is evaluated over all 1-a dimensions =(yielding RMSECVnew).
標簽： from eliminates PRINCIPLE algorithm
上傳時間： 2016-11-27
上傳用戶：凌云御清風
This effort started as an answer to the numerous questions the authors have repeatedly had to answer about electrostatic discharge (ESD) protection and input/output (1/0) designs. In the past no comprehensive book existed suffi- ciently covering these areas, and these topics were rarely taught in engineering schools. Thus first-time I/O and ESD protection designers have had consider- able trouble getting started. This book is in part an answer to such needs.
上傳時間： 2020-06-05
上傳用戶：shancjb
In the seven years since the first edition of this book was completed, Electrostatic Discharge (ESD) phenomena in integrated circuits (IC) continues to be important as technologies shrink and the speed and size of the chips increases. The phenom- ena related to ESD events in semiconductor devices take place outside the realm of normal device operation. Hence, the physics governing this behavior are not typ- ically found in general textbooks on semiconductors.
標簽： Integrated Circuits Silicon ESD In
上傳時間： 2020-06-05
上傳用戶：shancjb
Electrostatic discharge (ESD) events can have serious detrimental effects on the manufacture and performance of microelectronic devices, the systems that contain them, and the manufacturing facilities used to produce them. Submicron device technologies, high system operating speeds, and factory automation are making ESD control programs a critical factor in the quality and reliability of ESD-sensitive products.
標簽： Management Program ESD
上傳時間： 2020-06-05
上傳用戶：shancjb
This text, ESD Basics: From Semiconductor Manufacturing to Product Use was initiated on the need to produce a text that addresses fundamentals of electrostatic discharge from the manufacturing environment to today’s products. As the manufacturing world evolves, semi- conductor networks scale, and systems are changing, the needs and requirements for reliabi- lity and ESD protection are changing. A text is required that connects basic ESD phenomena to today’s real world environment.
上傳時間： 2020-06-05
上傳用戶：shancjb
In the field of electricity, electrostatics, and circuit theory, there are many discoveries and accomplishments that have lead to the foundation of the field of electrostatic discharge (ESD) phenomenon. Below is a chronological list of key events that moved the field of electrostatics forward:
上傳時間： 2020-06-05
上傳用戶：shancjb
Construction Strategy of ESD Protection CircuitAbstract： The principles used to construct ESD protection on circuits and the basic conceptions of ESD protection design are presented.Key words：ESD protection/On circuit, ESD design window, ESD current path1 引言靜電放電（ESD，Electrostatic Discharge）給電子器件環境會帶來破壞性的后果。它是造成集成電路失效的主要原因之一。隨著集成電路工藝不斷發展，互補金屬氧化物半導體（CMOS，Complementary Metal-Oxide Semiconductor）的特征尺寸不斷縮小，金屬氧化物半導體(MOS, Metal-Oxide Semiconductor)的柵氧厚度越來越薄，MOS 管能承受的電流和電壓也越來越小，因此要進一步優化電路的抗ESD 性能，需要從全芯片ESD 保護結構的設計來進行考慮。
標簽： Construction Strategy ESD of
上傳時間： 2013-11-09
上傳用戶：Aidane
A CCITT-16 CRC calculator. The source contains both the calculated (smaller but slower) version, and the table driven (faster but larger) version.
標簽： calculator calculated contains smaller
上傳時間： 2015-01-13
上傳用戶：s363994250
