亚洲欧美第一页_禁久久精品乱码_粉嫩av一区二区三区免费野_久草精品视频

蟲蟲首頁| 資源下載| 資源專輯| 精品軟件
登錄| 注冊

Displace

  • GaN-on-Si+Displace+Si+and+SiC

    GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.

    標簽: GaN-on-Si Displace and SiC Si

    上傳時間: 2020-06-07

    上傳用戶:shancjb

主站蜘蛛池模板: 鹤壁市| 阳原县| 通道| 南城县| 衡阳县| 左权县| 如皋市| 关岭| 盈江县| 顺平县| 马鞍山市| 安化县| 湟源县| 白水县| 平遥县| 兴海县| 孝义市| 苏尼特左旗| 临城县| 紫阳县| 延长县| 卓资县| 罗平县| 信宜市| 万州区| 万荣县| 英超| 吴川市| 辽阳市| 清远市| 长宁区| 祁阳县| 新巴尔虎左旗| 陇川县| 叶城县| 改则县| 华阴市| 无锡市| 班玛县| 湖南省| 泰来县|