設計功率MOSFET驅動電路時需重點考慮寄生參數對電路的影響。米勒電容作為MOSFET器件的一項重要參數,在驅動電路的設計時需要重點關注。重點觀察了MOSFET的開通和關斷過程中柵極電壓、漏源極電壓和漏源極電流的變化過程,并分析了米勒電容、寄生電感等寄生參數對漏源極電壓和漏源極電流的影響。分析了柵極電壓在米勒平臺附近產生振蕩的原因,并提出了抑制措施,對功率MOSFET的驅動設計具有一定的指導意義。When designing the drive circuit of power MOSFET,the influence of parasitic parameters on the circuit should be concerned.As an important parameter of MOSFET device,Miller capacitance should be considered in the design of drive circuit.The variation of gate voltage,drain source voltage and drain source current during the turn-on and turn-off of MOSFET were observed.The influences of parasitic parameters such as Miller capacitance and parasitic inductance on drain source voltage and drain source current were analyzed.The reasons of gate voltage oscillation nearby Miller plateau were analyzed,and the restraining measures were put forward.This research was instructive for the drive design of power MOSFET.
12.5mDEM數據，是ALOS（Advanced Land Observing Satellite，2006年發射）衛星相控陣型L波段合成孔徑雷達（PALSAR）采集。該傳感器具有高分辨率、掃描式合成孔徑雷達、極化三種觀測模式。該數據水平及垂直精度可達12.5米。該文件為江蘇省分市12.5m DEM數據
