This paper reviews key factors to practical ESD protection design for RF and analog/mixed-signal (AMS) ICs, including general challenges emerging, ESD-RFIC interactions, RF ESD design optimization and prediction, RF ESD design characterization, ESD-RFIC co-design technique, etc. Practical design examples are discussed. It means to provide a systematic and practical design flow for whole-chip ESD protection design optimization and prediction for RF/AMS ICs to ensure 1 st Si design success.
標(biāo)簽： ESD_protection_for_RF_and_AMS_ICs
上傳時(shí)間： 2020-06-05
上傳用戶：shancjb
Micro-Electro-Mechanical Systems (MEMS) are miniature systems composed ofintegratedelectricalandmechanicalpartstosenseand/orcontrolthingsonaμmscale. The concept of MEMS is attributed to Richard Feynman’s famous talk on December 29th, 1959 [2,3]. Dr. Feynman foresaw many aspects of future MEMS development with his insight in microphysics. In particular, material properties in the μm scale are differentfrombulkpropertiesandthescalingdownofintegratedcircuits(IC)fabrication technology has been a major driving force of MEMS development.
標(biāo)簽： Performance High MEMS RF
上傳時(shí)間： 2020-06-06
上傳用戶：shancjb
Over many years, RF-MEMS have been a hot topic in research at the technology and device level. In particular, various kinds of mechanical Si-MEMS resonators and piezoelectric BAW (bulk acoustic wave) resonators have been developed. The BAW technology has made its way to commercial products for passive RF filters, in particular for duplexers in RF transceiver front ends for cellular communica- tions. Beyond their use in filters, micromachined resonators can also be used in conjunction with active devices in innovative circuits and architectures.
標(biāo)簽： MEMS-based Circuits Systems and
上傳時(shí)間： 2020-06-06
上傳用戶：shancjb
GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications: Electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of: breakdown voltage, switching frequency and Overall systems efficiency.
標(biāo)簽： GaN-on-Si Displace and SiC Si
上傳時(shí)間： 2020-06-07
上傳用戶：shancjb
To a quantum mechanic the whole universe is one godawful big interacting wavefunction ? but to the rest of us, it’s a world full of separate and distinguishable objects that hurt us when we kick them. At a few months of age, human children recognize objects, expect them to be permanent and move continuously, and display surprise when they aren’t or don’t. We associate visual, tactile, and in some cases audible and olfactory sensations with identifiable physical things. We’re hardwired to understand our environment as being composed of separable things with specific properties and locations. We understand the world in terms of what was where when.
上傳時(shí)間： 2020-06-08
上傳用戶：shancjb
This manuscript is a partial draft of a book to be published in early 1994 by AddisonWesley (ISBN 0-201-63337-X). Addison-Wesley has given me permission to make drafts of the book available to the Tcl community to help meet the need for introductory documentation on Tcl and Tk until the book becomes available. Please observe the restrictions set forth in the copyright notice above: you’re welcome to make a copy for yourself or a friend but any sort of large-scale reproduction or reproduction for profit requires advance permission from Addison-Wesley
標(biāo)簽： Toolkit
上傳時(shí)間： 2020-07-05
上傳用戶：
使用片式磁珠和片式電感的原因：是使用片式磁珠還是片式電感主;要還在于應(yīng)用。在諧振電路中需要使用片式電感。而需要消除不需要的EMI噪聲時(shí)，使用片式磁珠是最佳的選擇。 磁珠是用來吸收超高頻信號，象-一些RF電路，PLL，振蕩電路，含超高頻存儲器電路（DDRSDRAM，RAMBUS等）都需要在電源輸入部分加磁珠。而電感是一種蓄能元件，用在LC振蕩電路，中低頻的濾波電路等，其應(yīng)用頻率范圍很少超過錯(cuò)50MHZ。 磁珠專用于抑制信號線、電源線上的高頻噪聲和尖峰干擾，還具有吸收靜電脈沖的能力。磁珠的功能主要是消除存在于傳輸線結(jié)構(gòu)（PCB電路）中的RF噪聲，RF能量是疊加在直流傳輸電平上的交流正弦波成分，直流成分是需要的有用信號，而射頻RF能量卻是無用的電磁干擾沿著線路傳輸和輻射（EMI）。要消除這些不需要的信號能量，使用片式磁珠扮演高頻電阻的角色（衰減器），該器件允許直流信號通過，而濾除交流信號。通常高頻信號為30MHz以上，然而，低頻信號也會受到片式磁珠的影響
標(biāo)簽： pcb
上傳時(shí)間： 2021-11-06
上傳用戶：xsr1983
CHAPTER 1: THE OP AMP CHAPTER 2: OTHER LINEAR CIRCUITS CHAPTER 3: SENSORS CHAPTER 4: RF/IF CIRCUITS CHAPTER 5: FUNDAMENTALS OF SAMPLED DATA SYSTEMS CHAPTER 6: CONVERTERS CHAPTER 7: DATA CONVERTER SUPPORT CIRCUITS CHAPTER 8: ANALOG FILTERS CHAPTER 9: POWER MANAGEMENT CHAPTER 10: PASSIVE COMPONENTS CHAPTER 11: OVERVOLTAGE EFFECTS ON ANALOG INTEGRATED CIRCUITS CHAPTER 12: PRINTED CIRCUIT BOARD (PCB) DESIGN ISSUES CHAPTER 13: DESIGN DEVELOPMENT TOOLS
標(biāo)簽： 運(yùn)算放大器 轉(zhuǎn)換器 模擬濾波器
上傳時(shí)間： 2021-12-21
上傳用戶：wangshoupeng199
高通(Qualcomm)藍(lán)牙芯片QCC5151_硬件設(shè)計(jì)詳細(xì)指導(dǎo)書（官方內(nèi)部培訓(xùn)手冊）共52頁其內(nèi)容是針對硬件設(shè)計(jì)、部分重要元器件選擇(ESD，F(xiàn)ilter）及走線注意事項(xiàng)的詳細(xì)說明。2 Power management 2.1 SMPS 2.1.1 Components specification 2.1.2 Input power supply selection 2.1.3 Minimize SMPS EMI emissions 2.1.4 Internal LDOs and digital core decoupling 2.1.5 Powering external components 2.2 Charger 2.2.1 Charger connections.2.2.2 General charger operation2.2.3 Temperature measurement during charging 2.3 SYS_CTRL 3 Bluetooth radio3.1 RF PSU component choice 3.2 RF band-pass filter3.3 Layout (天線 走線的注意事項(xiàng))4 Audio4.1 Audio bypass capacitors 4.2 Earphone speaker output4.3 Line/Mic input 4.4 Headphone output optimizition5 LED pads 5.1 LED driver 5.2 Digital/Button input 5.3 Analog input5.4 Disabled 6 Reset pin (Reset#)7 QSPIinterface 8 USB interfaces 8.1 USB device port8.1.1 USB connections8.1.2 Layout notes8.1.3 USB charger detection
標(biāo)簽： qualcomm 藍(lán)牙芯片 qcc5151
上傳時(shí)間： 2022-01-24
上傳用戶：XuVshu
LT3095MPUDD雙通道低噪聲偏置發(fā)生器的典型應(yīng)用電路凌力爾特公司 (Linear Technology Corporation) 推出雙通道 IC LT3095，該器件從單一輸入提供兩路非常低噪聲、低紋波的偏置電源。每個(gè)通道都納入了單片升壓型 DC/DC 轉(zhuǎn)換器，一個(gè)集成的超低噪聲和高 PSRR (電源抑制比) 線性穩(wěn)壓器對該轉(zhuǎn)換器進(jìn)行了后置穩(wěn)壓。LT3095 在輸出電壓高達(dá) 20V 時(shí)提供高達(dá) 50mA 的連續(xù)輸出電流，總紋波和噪聲 <100μVP-P。該器件在 3V 至 20V 輸入電壓范圍內(nèi)工作，從而可與多種電源兼容。 LT3095 的固定頻率、峰值電流模式升壓型 DC/DC 轉(zhuǎn)換器包括一個(gè)集成的 950mA 電源開關(guān)、肖特基二極管和內(nèi)部頻率補(bǔ)償。開關(guān)頻率在 450kHz 至 2MHz 內(nèi)可通過單個(gè)電阻器編程，或可同步至一個(gè)外部時(shí)鐘，因此允許使用纖巧的外部組件。結(jié)合緊湊的 3mm x 5mm QFN 封裝，LT3095 可提供簡單、占板面積緊湊、高效率的解決方案，適用于儀表放大器、RF 和數(shù)據(jù)轉(zhuǎn)換系統(tǒng)、以及其他低噪聲偏置應(yīng)用。 LT3095 的線性穩(wěn)壓器運(yùn)用凌力爾特專有的電流源基準(zhǔn)架構(gòu)，從而提供了很多優(yōu)勢，例如能夠用單個(gè)電阻器設(shè)定輸出電壓，帶寬、噪聲、PSRR 和負(fù)載調(diào)節(jié)性能基本上不受輸出電壓影響。集成輸出噪聲 (在 10Hz 至 100kHz 帶寬) 僅為 4μVRMS，而且在整個(gè)開關(guān)頻率范圍內(nèi) PSRR 超過70dB，從而使總的噪聲和紋波 <100μVP-P。線性穩(wěn)壓器調(diào)節(jié)升壓型轉(zhuǎn)換器的輸出電壓，使其比線性穩(wěn)壓器輸出電壓高 2V，從而優(yōu)化了功耗、瞬態(tài)響應(yīng)和 PSRR 性能。為了提高系統(tǒng)可靠性，LT3095 提供短路和熱保護(hù)，還為每個(gè)通道提供獨(dú)立和精確的使能 / UVLO 門限。微功率工作時(shí)，兩個(gè) EN 引腳均被拉低。
標(biāo)簽： 噪聲偏置發(fā)生器
上傳時(shí)間： 2022-02-15
上傳用戶：
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